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机译:
MIT, Dept Mat Sci & Engn, Cambridge, MA 02139, USA, .;
rovidence.org;
2-dimensional electron gases; Chemical-vapor-deposition; Strain relaxation; Ingaas layers; Gaas; Si; Dislocations; Morphology; Buffer;
机译:High-Power 1.3-(mu)m Quantum-Dot Superluminescent Light-Emitting Diode Grown by Molecular Beam Epitaxy
机译:High-Power 1.3-formula formulatype="inline"tex$mu$/tex/formulam Quantum-Dot Superluminescent Light-Emitting Diode Grown by Molecular Beam Epitaxy
机译:Fabrication of Er-doped GaAs/AlGaAs DH structure and light emitting diode by low-temperature molecular-beam epitaxy
机译:InGaN light-emitting diodes with band-pass-filter-like GaN : si nanoporous structures