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首页> 外文期刊>Nuclear Instruments and Methods in Physics Research, Section A. Accelerators, Spectrometers, Detectors and Associated Equipment >Frequency and temperature dependence of the depletion voltage from CV measurements for irradiated Si detectors
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Frequency and temperature dependence of the depletion voltage from CV measurements for irradiated Si detectors

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The dependence on measurement frequency and temperature of the depletion voltage extracted in the standard way from the CV characteristics of heavily irradiated silicon detectors is studied. parameterised and fitted. A similar pattern of behaviour is observed for a wide ran-c of analysed detectors. A formula is derived which allows correction of the depletion voltage from one frequency-temperature point to another. (C) 2002 Elsevier Science B.V. All rights reserved. References: 10

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