首页> 外文期刊>IEEE Transactions on Magnetics >Voltage-Current Hysteretic Characteristics in ME/Nd{sub}0.7Ca{sub}0.3MnO{sub}3 Thin Films With ME = Au, Pt, Ag, Cu
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Voltage-Current Hysteretic Characteristics in ME/Nd{sub}0.7Ca{sub}0.3MnO{sub}3 Thin Films With ME = Au, Pt, Ag, Cu

机译:ME/Nd{sub}0.7Ca{sub}0.3MnO{sub}3 薄膜中的电压电流迟滞特性,ME = Au、Pt、Ag、Cu

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摘要

In this work, different metal electrodes (ME) are sputtered on the surface of Nd{sub}0.7Ca{sub}0.3MnO{sub}3 thin films. The behavior of current-voltage (I-V) characteristics of these films is investigated. Among different metal electrodes, Au yields the smallest electrical hysteresis loop, while Cu generates the largest one. According to our analysis on the work function of each ME material, the result of ME-dependent I-V hysteresis loop can not be simply explained by the Schottky barrier. We propose that the electronnegativity of each ME material also plays a crucial role for the oxygen diffusion at interface. In conclusion, this study provides useful information for understanding the origin of I-V hysteresis loop and the principle of resistance switching in CMR manganites.
机译:在这项工作中,不同的金属电极(ME)溅射在Nd{sub}0.7Ca{sub}0.3MnO{sub}3薄膜的表面。研究了这些薄膜的电流-电压(I-V)特性行为。在不同的金属电极中,Au 产生最小的电滞回路,而 Cu 产生最大的电滞回路。根据我们对每种ME材料功函数的分析,ME依赖性I-V滞后回路的结果不能简单地用肖特基势垒来解释。我们提出,每种ME材料的电化学率对界面处的氧扩散也起着至关重要的作用。综上所述,本研究为理解CMR锰矿I-V磁滞回线的起源和电阻开关原理提供了有用的信息。

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