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机译:
Beijing Laboratory of Electron Microscopy, Institute of Physics and Center for Condensed Matter Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100080, China;
机译:Piezoelectric, electro-optical, and photoelastic effects in In_(x)Ga_(1-x)N/GaN multiple quantum wells
机译:Comparison of Si doping effect in optical properties of GaN epilayers and In_(x)Ga_(1-x)N quantum wells
机译:Effects of rapid thermal annealing on the optical properties of In_(0.53)Ga_(0.47)As/In_(0.52)Al_(0.48)As multiple quantum wells with InGaAs and dielectric capping layers
机译:在批量Ga_(1-x)中的电子G型in_(x)AS_(y)Sb_(1-Y)/ gasb季合金和Gasb / Ga_(1-x)In_(x)AS_(Y)SB_( 1-y)/ gasb球形量子点
机译:GaN,In_(0.05)Ga_(0.95)N和a中的超快载流子弛豫 In_(0.05)Ga_(0.95)/ In_(0.15)Ga_(0.85)N多量子阱