Analysis of random-dopant induced fluctuations of frequency characteristics of semiconductor devices

摘要

A technique for the analysis of fluctuations of frequency characteristics of semiconductor devices induced by random-doping fluctuations is presented. This technique completely avoids computations for numerous doping realizations and, therefore, it is computationally much more efficient than purely "statistical" methods. This technique yields information on the sensitivity of variances of frequency characteristics to different locations of doping fluctuations. This information can be directly used for the design of dopant fluctuation-resistant structures of semiconductor devices. The numerical implementation of this technique is discussed and numerous computational results are presented and compared with those obtained by using purely statistical techniques.