Surface photovoltage spectroscopy and normal-incidence reflectivity characterization of a 1.3 μm InGaAlAs/InP vertical-cavity surface-emitting laser structure

Y. S. Huang; L. Malikova; Fred H. PollakJ.-P. DebrayR. HoffmanA. AmtoutR. A. Stall

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Surface photovoltage spectroscopy and normal-incidence reflectivity characterization of a 1.3 μm InGaAlAs/InP vertical-cavity surface-emitting laser structure

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We have investigated a 1.3 μm InGaAlAs/InP (001) vertical-cavity surface-emitting laser (VCSEL) structure using surface photovoltage spectroscopy (SPS) and normal-incidence reflectivity. The SPS measurements were performed as a function of angle of incidence relative to the normal (0°-55°) and temperature (300 K

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《Journal of Applied Physics》 |2002年第9期|6203-6205|共3页
作者
Y. S. Huang; L. Malikova; Fred H. PollakJ.-P. DebrayR. HoffmanA. AmtoutR. A. Stall;
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Department of Physics and New York State Center for Advanced Technology in Ultrafast Photonic Materials and Applications, Brooklyn College of the City University of New York, Brooklyn, New York 11210;

rovidence.org;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种英语
中图分类应用物理学;
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Surface photovoltage spectroscopy and normal-incidence reflectivity characterization of a 1.3 μm InGaAlAs/InP vertical-cavity surface-emitting laser structure

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