Structural, electrical, and optical properties of InAs_(x)Sb_(1-x) epitaxial films grown by liquid-phase epitaxy

摘要

The InAs_(x)Sb_(1-x) films were grown on (100) GaSb substrates by liquid-phase epitaxy, and their structural, electrical, and optical properties were investigated. The high-resolution x-ray diffraction results reveal that the single crystalline InAs_(x)Sb_(1-x) films with a midrange composition are epitaxially grown on the GaSb substrates. Temperature dependence of the Hall mobility was theoretically modeled by considering several predominant scattering mechanisms. The results indicate that ionized impurity and dislocation scatterings dominate at low temperatures, while polar optical phonon scattering is important at room temperature (RT). Furthermore, the InAs_(x)Sb_(1-x) films with the higher As composition exhibit the better crystalline quality and the higher mobility. The InAs_(0.35)Sb_(0.65) film exhibits a Hall mobility of 4.62 X 10~(4) cm~(2) V~(-1) s~(-1). The cutoff wavelength of photoresponse is extended to about 12 (mu)m with a maximum responsivity of 0.21 V/W at RT, showing great potential for RT long-wavelength infrared detection.