Generation of amber III-nitride based light emitting diodes by indium rich InGaN quantum dots with InGaN wetting layer and AlN encapsulation layer

摘要

Indium rich InGaN nanostructures grown by metalorganic chemical vapor deposition were incorporated in InGaN/GaN quantum wells for long wavelength generation. These results were achieved by optimizing the growth temperature of the nanostructures, InGaN quantum well, the AlN capping layer and the GaN barrier layers. Before the growth of nanostructures, a thin InGaN wetting layer was included to reduce the lattice mismatch as well as to enhance the deposition of indium-rich InGaN nanostructures These individual quantum wells were each subsequently capped with an AlN layer which better preserved the In-rich phase in the nanostructures and prevented the indium interdiffusion between the InGaN/GaN heterojunctions. The AlN capping layer also reduces the effect of piezeoelectric field in the active layers of the light emitting diodes as seen from the reduction in the blueshift in the electroluminescence peaks with higher injection currents. The energy band profile of such a structure is discussed.