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Facile electrodeposition CoCu/Cu multilayers: deposition potentials for magnetic layers

机译:简易电沉积CoCu/Cu多层膜:磁性层的沉积电位

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摘要

The Co(Cu)/Cu magnetic multilayers were produced by electrodeposition technique as a function of the cathode potentials for magnetic layer deposition from a single bath. For proper depositions, cyclic voltammograms were used and the current-time transients were obtained. All potentials were determined with respect to saturated calomel electrode. The Co layers were deposited at cathode potentials of -1.3, -1.5 and -1.7 V, while -0.3 V was used for the Cu layers deposition. All multilayers were polycrystalline in the face-centred-cubic (fcc) structure with both Co and Cu layers adopting the fcc structure. The crystal structure of the multilayers is the same as fcc bulk Cu, but (220) peak splits the two peaks which are Cu(220) and Co(220). Both Co and Cu diffraction lines overlap in the (111) and (200) strong peaks and thus they seem to be a single peak. In the magnetisation measurements, the highest saturation magnetization was found to be 212 kA/m in producing with -1.5 V for Co deposition potential. The coercivities of multilayers are found to be 12.1, 16.9 and 18.3 kA/m for -1.3, -1.5 and -1.7 V cathode potentials, respectively.
机译:Co(Cu)/Cu磁性多层膜是通过电沉积技术产生的,作为单浴磁层沉积阴极电位的函数。为了正确沉积,使用循环伏安图并获得电流时间瞬变。所有电位均相对于饱和甘汞电极测定。Co层沉积在-1.3、-1.5和-1.7 V的阴极电位下,而-0.3 V用于Cu层沉积。所有多层膜均为面心立方(fcc)结构的多晶层,其中Co和Cu层均采用fcc结构。多层膜的晶体结构与 fcc 块体 Cu 相同,但 (220) 峰分裂了 Cu(220) 和 Co(220) 两个峰。Co 和 Cu 衍射线在 (111) 和 (200) 强峰中重叠,因此它们似乎是一个单峰。在磁化测量中,发现最高饱和磁化强度为212 kA/m,生产时共沉积电位为-1.5 V。对于-1.3、-1.5和-1.7 V阴极电位,多层膜的矫顽力分别为12.1、16.9和18.3 kA/m。

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