Anisotropic electronic structure of NaAlSi studied by angle-resolved soft x-ray emission spectroscopy

摘要

The characteristic x-ray emission direction of a material indicates the direction of the bonding orbitals and spatial symmetry of the electron orbitals. Accordingly, the intensity of x-ray emission, which varies with the direction of emission and crystal orientation, provides crucial information regarding anisotropic electronic structures. This study utilized angle-resolved soft x-ray emission spectroscopy (SXES) on a layered material, NaAlSi, to ascertain the spatial distribution of the valence electrons. Distinct alterations in the spectral intensity distributions were observed in the Al–L2,3 and Si–L2,3 spectra with respect to the emission angle. To interpret the anisotropic SXES spectra, the spatial distribution of each valence electronic state was simulated using first-principle calculations. Although the anisotropic emission intensity could not explain the symmetry of the spatial distributions of the isolated s and d atomic orbitals, the anisotropy of the SXES spectra could be interpreted as the spatial distribution of these orbitals when hybridized with p orbitals. Furthermore, the spectral structure corresponding to the electronic states near the Fermi level reflected the characteristics of the d orbitals. Therefore, angle-resolved SXES measurements can effectively discern the spatial distribution of hybridized electron orbitals with specific energy levels, which could enhance techniques related to electron distribution analysis, with potential applications in material science and electronic structure characterization.