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Effects of RF-Plasma Pretreatment on Panel-Aging Characteristics in AC Plasma Display Panel with Full-HD Cell Size

机译:射频等离子体预处理对具有全高清单元尺寸的交流电等离子显示面板的面板老化特性的影响

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摘要

The organic impurities, such as C_xH_y, on the MgO surface are known to be an important parameter that affects the panel-aging characteristics in an ac plasma display panel (PDP). Accordingly, the RF-plasma pretreatment on the MgO layer is adopted to reduce the panel-aging process time by reducing the organic impurities. The resultant changes in the discharge characteristics during the panel-aging process, including the firing voltage, formative address delay time, statistical address delay time, and wall voltage variation, were examined in comparison with both cases with and without plasma pretreatment on MgO layer using various gases in the 50-in. full-high definition ac-PDP with He (35%) - Xe (11%) contents. It is concluded that the Ar or Ar followed by O_2 plasma pretreatment was the most effective in eliminating the residual impurities on the MgO surface, thereby reducing the panel-aging process time.
机译:已知MgO表面上的有机杂质(例如C_xH_y)是影响ac等离子显示面板(PDP)中面板老化特性的重要参数。因此,采用MgO层上的RF等离子体预处理以通过减少有机杂质来减少面板老化处理时间。与使用和不使用MgO层进行等离子体预处理的情况相比,在面板老化过程中放电特性的最终变化,包括点火电压,形成地址延迟时间,统计地址延迟时间和壁电压变化,进行了检查。 50英寸中的各种气体。具有He(35%)-Xe(11%)含量的全高清ac-PDP。结论是,Ar或Ar进行O_2等离子体预处理最有效地消除了MgO表面上的残留杂质,从而减少了面板老化过程的时间。

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