Fast low bias pulsed DC transport measurements for the investigation of low temperature transport effects in semiconductor devices

摘要

We present a setup for fast, low-bias ( ≤1mV) DC transport measurements with μs time resolution for high ohmic resistance ( ≈20kΩ) semiconducting samples. We discuss the circuitry and instrumentation for the measurement approach that can be applied to any kind of semiconductor device or (gated) two-dimensional material and demonstrate the main measurement artifacts in typical measurements by means of circuit simulation. Based on the latter, we present a simple two-step protocol for eliminating the measurement artifacts reliably. We demonstrate the technique by measuring the transitions between quantum Hall plateaus in the HgTe quantum wells and resolve plateaus as short-lived as 100 μs.