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Magnetic and anomalous Hall effect investigations of co-sputtered Co2MnGa Heusler alloy thin films

机译:共溅射Co2MnGa Heusler合金薄膜的磁性与异常霍尔效应研究

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摘要

The cobalt-based full Heusler alloy Co2MnGa (CMG) is well known for exhibiting an exotic phenomenon such as magnetic Weyl semimetallic nature with a high Curie temperature of ∼700 K and a giant anomalous Hall effect. Here, we report a detailed study of structural, electrical, and magnetic properties of Co2MnGa thin films (thickness in the 40–10 nm range) grown on Si(100) by the direct-current magnetron co-sputtering technique using Co and MnGa targets. Structural analysis of the samples revealed the polycrystalline nature of these films with B2 type structural ordering. The damping parameter decreases with the increase in film thickness and reaches the minimum value of 6.1 × 10−3 for a 40 nm thin CMG film. These CMG films are magnetically isotropic and soft ferromagnetic in nature. A remarkably high value of anomalous Hall conductivity (AHC) of 1920 S/cm (2 K) is found for the 40 nm thin film, which is comparable to earlier reported values on highly ordered CMG films. Nearly 73 of this AHC value originates from the intrinsic contribution. The AHC and longitudinal conductivity both increase with the film thickness. Different scaling mechanisms are used to compute the intrinsic and extrinsic contributions playing a role in AHC. The analysis of advanced scaling by Tian et al., Phys. Rev. Lett. 103, 1–4 (2009) performed on these CMG films suggests the consistency in the enhanced intrinsic AHC value irrespective of the thickness and a decrease in skew scattering contribution with thickness. These results will enhance the understanding about the magnetic and transport properties of Co2MnGa thin films of different thicknesses and suggest it to be a promising material for topospintronic applications.
机译:钴基全Heusler合金Co2MnGa(CMG)以表现出一种奇特的现象而闻名,例如具有∼700 K的居里温度的磁性外尔半金属性质和巨大的异常霍尔效应。在这里,我们报告了通过使用 Co 和 MnGa 靶材的直流磁控共溅射技术在 Si(100) 上生长的 Co2MnGa 薄膜(厚度在 40-10 nm 范围内)的结构、电学和磁性的详细研究。对样品的结构分析揭示了这些薄膜的多晶性质,具有B2型结构有序。阻尼参数随着薄膜厚度的增加而降低,对于40 nm的CMG薄膜,阻尼参数达到6.1×10−3的最小值。这些CMG薄膜本质上是磁各向同性和软铁磁性的。在40 nm薄膜上发现了1920 S/cm(2 K)的异常霍尔电导率(AHC)值,这与早期报道的高度有序CMG薄膜的值相当。AHC值的近73%来自内在贡献。AHC和纵向电导率均随着膜厚的增加而增加。使用不同的缩放机制来计算在AHC中起作用的内在和外在贡献。The analysis of advanced scaling [by Tian et al., Phys. Rev. Lett.103, 1–4 (2009)] 对这些 CMG 薄膜进行的研究表明,无论厚度如何,增强的内在 AHC 值都具有一致性,并且偏斜散射贡献随厚度的增加而减少。这些结果将增强对不同厚度Co2MnGa薄膜的磁性和传输特性的理解,并表明它是一种很有前途的拓扑自旋电子学应用材料。

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