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Improvement of the morphological stability of Ag film on (001)Si with a thin interposing Au layer

机译:改善(001)Si上具有薄插层Au层的Ag膜的形貌稳定性

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摘要

The morphological stability of ultrahigh vacuum deposited Ag film on (001)Si has been drastically improved by the deposition of 1 to 5 nm thick interposing Au layers, In Ag/(001))Si samples, Ag islands were found to form after annealing at 200 degrees C for 1 h. In contrast, continuous and uniform metal layer persisted after annealing at 500 degrees C for 1 h in samples with a thin intermediate Au layer. The significantly improved morphological stability is attributed to the strong intermixing between Au and Ag atoms at the metal/Si interface. The intermixing lowers the interface energy between metal layer and (001)Si. References: 13
机译:通过沉积1至5 nm厚的Au层,大大提高了(001)Si上超高真空沉积Ag膜的形貌稳定性,在Ag/(001))Si样品中,在200°C下退火1 h后形成Ag岛。相反,在具有薄中间金层的样品中,在500°C退火1小时后,连续和均匀的金属层仍然存在。形态稳定性的显著提高归因于金属/硅界面处Au和Ag原子之间的强烈混合。混合降低了金属层和(001)Si之间的界面能。 [参考文献:13]

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