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首页> 外文期刊>Nuclear Instruments and Methods in Physics Research, Section A. Accelerators, Spectrometers, Detectors and Associated Equipment >Temperaturedependenceofthethindeadlayeravalanchephotodiodeforlowenergy electronmeasurements
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Temperaturedependenceofthethindeadlayeravalanchephotodiodeforlowenergy electronmeasurements

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WehaveinvestigatedthetemperaturedependenceoftheHamamatsuspl6815AvalanchePhotodiode(APD) response,whenusedasanlowenergyelectrondetector,overthetemperaturerangefrom 9 to30 3C. Inordertomakeprecisemeasurements,relevanttotheparticlesofinterest,electronswereactuallyusedtocalibratetheAPDresponse.Thegainvariationoverthetemperaturewas 1:2=K at10 3C foranominalbiasvoltage.Althoughaslightdeadlayereffectwasfound,thelinearityoftheresponse wasexcellentoverallmeasuredtemperatures,andthevariationoftheenergyresolutionwasacceptably smalltomaintaingoodperformance.Thetemperatureeffectscanbereadilycanceledoutwith anactivebiasvoltagecontrolbasedontheambienttemperaturesolongastheinternalgainismaintainedbetween15and20

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