Formation of (Ti,Al)N/Ti2AlN multilayers after annealing of TiN/TiAl(N) multilayers deposited by ion beam sputtering

摘要

By using ion beam sputtering, TiN/TiAl(N) multilayers of various modulation wavelengths (Lambda=8, 13, and 32 nm) were deposited onto silicon substrates at room temperature. After annealing at 600 degrees C in vacuum, one obtains for Lambda=13 nm a (Ti,Al)N/Ti2AlN multilayer as it is evidenced from x-ray diffraction, high resolution transmission electron microscopy, and energy filtered electron imaging experiments. X-ray photoelectron spectroscopy (XPS) experiments show that the as-deposited TiAl sublayers contain a noticeable amount of nitrogen atoms which mean concentration varies with the period Lambda. They also evidenced the diffusion of aluminum into TiN sublayers after annealing. Deduced from these observations, we propose a model to explain why this solid-state phase transformation depends on the period Lambda of the multilayer. (c) 2008 American Institute of Physics.