Ge‐doped GaxIn1−xAs LED’s in 1‐mgr;m wavelength region

摘要

GaxIn1−xAs light‐emitting diodes which utilize Ge as ap‐type impurity were fabricated from LPE crystals. Use of a GaAs (111) A surface as a substrate and reduction of dislocation density by a continuous grading technique yield LED’s of 0.48percent; external quantum efficiency at 1.02‐mgr;m wavelength. The electroluminescent response time of these diodes is the same order as that of GaAs LED’s which utilize Zn as ap‐type impurity.