On-Chip Integration of Orthogonal Subsystems Enabled by Broadband Twist at 220#x2013;325 GHz

摘要

In this article, we report for the first time on a low-loss compact platform that enables the integration of H- and E-plane rectangular waveguide subsystems enabled by 90#x00B0; polarization rotation of rectangular waveguide sections on a silicon-micromachined chip. The proposed platform offers unprecedented design flexibility for a 2.5D fabrication technology such as silicon micromachining, since orthogonal waveguide device sections with full design freedom in H-plane geometries can be cofabricated with sections with full design freedom in E-plane geometries, enabled by novel, integrated waveguide twists optimized for 2.5D fabrication. The platform is developed for use in broadband millimeter- and submillimeter-wave waveguide circuits and prototypes are implemented in the 220#x2013;325-GHz band. A prototype chip demonstrating the platform, implemented by bonding three stacked silicon chips, is fabricated. The measured results of the twist prototype exhibit a very low insertion loss of less than 0.2 dB and a return loss of 20 dB or better in most of the 220#x2013;325-GHz band. An integrated eighth-degree lowpass waveguide filter with axial ports having a cut-off frequency of 280 GHz is codesigned with the twist transition and fabricated on the platform to demonstrate its application. The filter shows 0.4-dB measured insertion loss and has a measured return loss in the passband of better than 14 dB.