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Bismuth titanium indium antimony oxide: A low-temperature-coefficient, high-K dielectric material

机译:铋钛铟锑氧化物:一种低温度系数、高K介电材料

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摘要

The 1 MHz dielectric properties for mixed-phase polycrystalline ceramics in the system Bi4Ti3O12-Bi(InxSb1-x)O-3 were reported. In the vicinity of ambient temperature, the dielectric constants for the Sb and In end-members were approximately 430 and 160, respectively, and the temperature coefficients of dielectric constant (TCKs) were approximately -7600 and +430 ppm/deg. At an overall composition of Bi4Ti3O12:Bi(In0.37Sb0.63)O-3 a dielectric constant of 144 and a low TCK were found. Powder x-ray diffraction and electron microscopy analyses indicated that the optimal composition contained three major phases. Deviation of any of the elements from the above ratio leads to degradation of the properties. References: 7
机译:报道了Bi4Ti3O12-Bi(InxSb1-x)O-3系统中混合相多晶陶瓷的1 MHz介电特性。在环境温度附近,Sb 和 In 端段的介电常数分别约为 430 和 160,介电常数 (TCK) 的温度系数约为 -7600 和 +430 ppm/deg。在Bi4Ti3O12:Bi(In0.37Sb0.63)O-3的整体组成中,介电常数为144,TCK较低。粉末X射线衍射和电子显微镜分析表明,最佳成分包含三个主要相。任何元素偏离上述比例都会导致性能下降。[参考资料: 7]

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