Peltier cooling at a Inhyphen;InP interface

摘要

The cooling due to the Peltier effect was measured by passing electrical current across the liquidhyphen;solid interface in a vertical liquidhyphen;phase epitaxy system. Application of a steadyhyphen;state heathyphen;transfer analysis yielded values for the Peltier coefficient of InP (NDminus;NAquest;3times;1016cmminus;3) between 0.21 and 0.50 V in the 300ndash;600thinsp;deg;C temperature range. The cooling temperatures observed could be effectively used for the growth of InP epitaxial layers.