Pointhyphen;ofhyphen;use arsine generation for organometallic vaporhyphen;phase epitaxial growth

摘要

A technique for the continuous generation of arsine as required for organometallic vaporhyphen;phase epitaxial growth is described. Arsine is generated through the reduction of arsenic trichloride by lithium tetrahydridoaluminate in a nonvolatile ether. Reaction conditions appropriate for steadyhyphen;state operation, necessary for this application, have been established. Arsenide conversion efficiencies in excess of 95percnt; have been consistently demonstrated with arsine flows up to 100 mgr;mol/min. GaAs grown using generated arsine exhibits a 77hyphen;K carrier concentration of 1.29times;1015cmminus;3and mobility of 33thinsp;000 cm2/Vthinsp;s.