Radiationhyphen;induced traps in lowhyphen;energy protonhyphen;irradiated GaAs solar cells

摘要

Trapping centers produced by 250hyphen;keV, 400hyphen;keV, 700hyphen;keV, and 1.5hyphen;MeV proton irradiations at room temperature in AlGaAshyphen;GaAs solar cells have been studied. The traps detected by deephyphen;level transient spectroscopy are the same as those produced by electron irradiations, only their introduction rates are different. An introduction rate was determined for each trapping center at the various proton energies. The large concentration of theE4 trap suggests it is associated with a clusterhyphen;type defect.