Quadratic electro‐optic (Kerr) effects in zincblende‐type semiconductors: Key properties of InGaAsP relevant to device design

摘要

By combining the first‐ and second‐order Stark effects of the electronic energy‐band structures with well‐defined optical susceptibility, we have obtained an expression for the dispersion of quadratic electro‐optic (QEO) coefficients in zincblende‐type materials. It has been found that the calculated QEO coefficients show very strong dispersion at a region near the direct‐band edge. The theoretical prediction has been compared with recently reported QEO dispersion data in materials of InGaAsP quaternaries. It has been found that the present model provides generally acceptable values, in quite good agreement with the experimental data. The present results allow us to design a wide variety of optoelectronic devices for use in optical‐fiber communications.