Selective saturation of paramagnetic defects in electronhyphen; and neutronhyphen;irradiated GaAs

摘要

A comparison of the electron paramagnetic resonance spectra obtained in fast neutronhyphen; and electronhyphen;irradiated GaAs crystals has confirmed the simultaneous presence of the quadruplet and singlet spectra, ascribed previously to As4+Gaand V2minus;Gacenters. Only in electronhyphen;irradiated material, however, are both signals separated by the selective microwave power saturation of the quadruplet. This apparent disparity is ascribed to a difference in the coupling between the two partners in the As4+Gahyphen;V2minus;Gaassociated complexes.