The fabrication and characteristics ofn,phyphen;CuInS2thinhyphen;film homojunction solar cells are presented. Dark and lightIhyphen;Vcharacteristics are reported for a 0.124hyphen;cm2device with eegr;=3.33percnt;,Voc=0.41 V,Isc=2.34 mA, and FF=0.43. A best efficiency of 3.62percnt; is cited. An examination of the forward dark lnJhyphen;vshyphen;Vcharacteristics indicates that the recombinationhyphen;generation mechanism at the junction dominates the device operation. The spectral characteristics are presented and indicate a maximum near the wavelength (lgr;=0.8 mgr;) corresponding to the energy gap of CuInS2, with a relatively low quantum efficiency (0.45). The stability and limitations of this photovoltaic device are discussed.
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