High energy B implantations were performed intonhyphen;type GaAs and InP at room temperature in the range of energies from 1 to 5 MeV and fluences from 1011to 1016cmminus;2. The material did not become amorphous for any of the fluences used. Buried layers with resistivities as high as 108OHgr;thinsp;cm and 106OHgr;thinsp;cm were obtained in GaAs and InP, respectively, after heat treatments. The breakdown voltages corresponding to the highest resistivities are 80 and 35 V, respectively, in GaAs and InP. In GaAs, the Rutherford backscattering analysis on the annealed samples showed an aligned yield close to that of a virgin sample, whereas, the yield in InP is more than that of the ashyphen;implanted sample.
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