Elimination of thermally induced biaxial stress in GaAs on Si layers by posthyphen;growth patterning

摘要

The biaxial tensile stress of 2.65 kbar in ashyphen;grown GaAs/Si is reduced by posthyphen;growth patterning of the GaAs and the reduction in stress is dependent on the pattern size and shape. For stripe patterns less than 15 mgr;m wide the stress becomes largely uniaxial with stress relief normal to the stripe direction. Rectangular patterns exhibited stress relief in orthogonal directions, and have the lowest stress in the narrow direction of the rectangle. A 9times;12 mgr;m2rectangle exhibited an average stress of 0.5 kbar.