Electroluminescence observation and xhyphen;ray topographic study of a nitrogenhyphen;doped GaPhyphen;LED

摘要

The lattice defects in nitrogenhyphen;doped GaP lighthyphen;emitting diodes (LEDrsquo;s) are investigated by taking an electroluminescence (EL) pattern and an xhyphen;ray topograph of a small LED chip. The onehyphen;tohyphen;one correspondence between the dark lines in the EL pattern and the screw dislocations is obtained.