Fully operational write‐read‐write and random‐access optical store

摘要

A write‐read‐write magneto‐optic memory for random access has been made to work as a feasibility model. The memory is an interim result of the development of a 107–108‐bit memory. Design aspects and function of the memory as well as experimental results are summarized. Operation for more than 300 h and more than 109read‐write cycles has not given rise to any degradation.