New growth method of solid phase epitaxy in sputtered YIG films

摘要

A new method of growing VIG films by solid phase epitaxy was attempted, for which amorphous Y-Fe-O films were sputtered on GGG (111) substrates at room temperature with a high sputtering rate, and subsequently annealed in various atmosphere at a temperature higher than 650℃. A possibility for SPE in VIG film could be verified by a constant growth rate of VIG films during the annealing as well as by results of both θ-2θ scanning and a very low value of Δθ{sub}50 in rocking curves.