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Photo‐induced currents in Ag‐Al2O3‐Al structures: Detection characteristics at 325 nm

机译:Ag‐Al2O3‐Al结构中的光连字符感应电流:325 nm处的检测特性

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摘要

We report the detection characteristics of planar Ag‐Al2O3‐Al structures at 325 nm as a function of angle, polarization, and bias. The experimental results are in excellent agreement with numerical computations based on a simple model in which the photoinduced currents are assumed to be proportional to the net absorptions in the Ag and Al films of the multilayered structure. Responsivities of the order of 1 V/W, and the simplicity of construction and operation of such metal‐barrier structures indicate their usefulness as ultraviolet detectors.
机译:我们报告了 325 nm 处平面 Ag‐Al2O3‐Al 结构的检测特性,作为角度、偏振和偏置的函数。实验结果与基于简单模型的数值计算非常吻合,其中假设光感应电流与多层结构的Ag和Al薄膜中的净吸收成正比。1 V/W的响应度,以及这种金属连字符屏障结构的构造和操作的简单性表明它们作为紫外检测器的有用性。

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