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Preparation of high moment CoFe films with controlled grain size and coercivity - art. no. 10N303

机译:制备具有可控晶粒尺寸和矫顽力的高矩 CoFe 薄膜 - 艺术。编号:10N303

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摘要

In this paper a preparation method for high moment CoFe thin films with soft magnetic properties is reported. A full control of coercivity in a series of 20-nm-thick CoFe films has been achieved without using seed layers, additives, or thermal annealing. The films were sputtered directly onto Si substrates and the coercivity was varied by changing the mean grain size in the sputtered films. The mean grain size was in turn controlled via the sputtering rate. A reduction in the coercivity has been observed from 120 Oe for samples with a mean grain size larger than 17 nm down to 12 Oe for a sample with a mean grain size of 7.2 nm. The results are in good agreement with the "random anisotropy model" relating the coercivity to the mean grain size in polycrystalline ferromagnetic films. (c) 2005 American Institute of Physics.
机译:本文报道了一种具有软磁性能的高矩CoFe薄膜的制备方法。在不使用种子层、添加剂或热退火的情况下,实现了对一系列 20 nm 厚 CoFe 薄膜的矫顽力的完全控制。薄膜直接溅射到Si衬底上,通过改变溅射薄膜的平均晶粒尺寸来改变矫顽力。平均晶粒尺寸又通过溅射速率进行控制。观察到矫顽力从平均晶粒尺寸大于 17 nm 的样品的 120 Oe 降低到平均晶粒尺寸为 7.2 nm 的样品的 12 Oe。结果与“随机各向异性模型”非常吻合,该模型将矫顽力与多晶铁磁薄膜的平均晶粒尺寸联系起来。(c) 2005年美国物理研究所。

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