Small‐signal ac response of dielectric materials containing static space‐charge fields: Application to ionic conductors and MIS structures

摘要

An efficient and quantitatively accurate scheme for obtaining the small‐signal ac response of dielectric materials containing static space‐charge fields near their boundaries is developed in the context of a general linear‐response formalism. The technique improves and greatly extends the earlier method of Hoyenetal. used to treat space‐charge‐limited transport in the ionic conductor AgCl. The general formalism is here implemented in detail for the case of one fully mobile, nonrecombining carrier in a uniformly doped material subject to arbitrary electrode boundary conditions. Illustrative applications to metal‐insulator‐semiconductor (MIS) structures and ionic conductors are considered. Extension of the method to more complex situations, involving minority‐carrier transport, nonuniform doping, and/or generation and recombination phenomena, appears readily feasible.