Photoluminescence excitation spectra of nitrogenhyphen;implanted AlxGa1minus;xAs

摘要

Photoluminescence excitation spectra have been measured for the nitrogenhyphen;implanted AlxGa1minus;xAs at 2thinsp;deg;K, because PLE spectroscopy has versatility for ionhyphen;implanted specimens. The results show that the absorption bands due to nitrogen isoelectronic impurities are formed below the Ggr;1conductionhyphen;band minimum even in the indirect composition range, while the emission bands due to nitrogen impurities are situated below theX1conductionhyphen;band minima.