Effect of annealing on resistivity and photoconductivity of solarhyphen;grade polycrystalline silicon and on solarhyphen;cell performance

摘要

The effect of annealing on the restistivity and photoconductivity of solarhyphen;grade polycrystalline silicon of grain size 100ndash;1200 mgr;m has been examined in the temperature range 900hyphen;1100thinsp;deg;C. Both resistivity and photoconductivity strongly depend on the temperature of annealing and grain size. The atmosphere in which annealing takes place, e.g., air, nitrogen, argon, or vacuum does not seem to have any effect on the results. Heat cycling of the starting material causes a reduction in the shorthyphen;circuit current of the solar cell.