机译:硅中CoSi2沉淀对超低掺杂剂浓度的敏感性。二、第一性原理计算
NRC Kurchatov Inst, Moscow 123182, Russia;
Natl Res Nucl Univ MEPhI, Dept Phys Problems Mat Sci, Moscow 115409, Russia;
Ctr Sci Nucl & Sci Mat, F-91405 Orsay, France;
机译:Dopant diffusion in semiconductors moderated by dopanthyphen;dopant interactions. II. Extension of theory and application to boron and gallium in silicon
机译:Theoretical study of potential n-type and p-type dopants in GaN from data mining and first-principles calculation
机译:On the Stokes problem for a suspension of spheres at nonzero concentrations. II. Calculations for effective medium theory