Etch pitting of fresh dislocations in C‐doped nickel

摘要

Dislocations in nickel single crystals with carbon levels near 100 ppm have been reliably etch pitted on their {111} plane using a chemical (phosphoric acid, nitric acid, ferric chloride) etch for 30 min at room temperature. Carbon doping is found to be necessary for the etch pitting, but fresh dislocations are found to be pitted even though the etching time is less than one‐millionth of the mean time of stay for carbon diffusion in the nickel lattice.