Electrical transport properties have been analyzed by Hall‐effect measurements for a series of epitaxialn‐type undoped InP films deposited on high‐resistivity GaAs : Cr or InP : Fe substrates by metalorganic chemical vapor deposition. For electron densities less than 1016cm−3, films deposited on GaAs : Cr substrates show a general increase in electron mobility with increase in electron density as small structural potential barriers play a significant role in determining the mobility. All films deposited on InP : Fe substrates had an electron density greater than 1016cm−3and exhibited behavior virtually identical to that of bulk single crystals of InP. Electron mobilities at 77 °K as high as 10 500 cm2/V sec on GaAs : Cr substrates and 16 500 cm2/V sec on InP : Fe substrates have been measured.
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