The effect of pressure on the semiconductor‐to‐metal transition temperature in tin and in dilute Sn–Ge alloys

摘要

The pressure/temperature characteristics of the grey (semiconductor) tin→white (metal) tin transition in pure tin and dilute Sn–Ge alloys has been examined by following electrical resistance changes in strip specimens. It is shown that grey tin→white tin phase boundary has a slope of −48.4±6 K/kbar, in good agreement with thermodynamic predictions.