Singlehyphen;crystalhyphen;aluminum Schottkyhyphen;barrier diodes prepared by molecularhyphen;beam epitaxy (MBE) on GaAs

摘要

Metalhyphen;semiconductor surface barriers were formed by epitaxially grown Al(001) on GaAs(001) with MBE at room temperature. The diodes exhibit nearly ideal electrical characteristics. It is also demonstrated that different barrier heights may be achieved by growing Al layers on MBE GaAs surfaces with different surface stoichiometries.