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首页> 外文期刊>journal of applied physics >Effect of saturation current on noise in IMPATT diodes under largehyphen;signal conditions
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Effect of saturation current on noise in IMPATT diodes under largehyphen;signal conditions

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摘要

A largehyphen;signal noise theory for IMPATT diodes, not neglecting the effect of the parasitic injected current (saturation and/or tunnel current) is presented. Under largehyphen;signal conditions, it is found that the noise increase is much less for high effective saturation current than for a low one. The theoretical conclusions are experimentally evidenced. The true physical mechanism behind the effective saturation is briefly explained.

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