InGaAsPphyphen;ihyphen;nphotodiodes for optical communication at the 1.3hyphen;mgr;m wavelength

摘要

The preparation and properties of Cdhyphen;diffusedphyphen;nhomojunction InGaAsP photodiodes designed specifically for operation at the 1.3hyphen;mgr;m wavelength are described. At a reverse bias of 10 V, the dark current of these diodes was as low as 15 pA. The peak responsivity at 1.3hyphen;mgr;m wavelength was 0.7 A/W. An impulse response (full width at half maximum) of 60 ps and a 3hyphen;dB bandwidth of 5.5 GHz were achieved.