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Defect structure of Cdhyphen;doped PbTe

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摘要

Hallhyphen;effect and solubility measurements are carried out on Cdhyphen;doped PbTe crystals equilibrated with (Pb,Cd) alloys of various compositions atT=700 and 800thinsp;deg;C and quenched to room temperature. In Pbhyphen;saturated conditions, while most of the Cd is found to be incorporated as neutral Cd on Pb sites CdxPb, a fraction of the total amount of Cd is present as positively charged interstitial species Cdicompensated by electrons. A complete defect model which can predict the behavior of Cdhyphen;doped PbTe in Cdhyphen;rich atmospheres as well as in Tehyphen;rich atmospheres is proposed.

著录项

  • 来源
    《journal of applied physics》 |1976年第11期|4993-5002|共页
  • 作者

    H. R. Vydyanath;

  • 作者单位
  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 英语
  • 中图分类
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