Formation of partially coherent antimony precipitates in ion implanted thermally annealed silicon

摘要

Thermal annealing of a supersaturated solid solution of antimony in silicon results in the formation of partially coherent antimony precipitates. Transmission electron microscopy and microdiffraction studies show the precipitates to be bounded by lcub;112rcub; Si surfaces with the lcub;111rcub; Si and lcub;1macr;012rcub; Sb planes coherent across the interface. The role of dislocations in the growth of the precipitates is discussed.