Properties of Schottky barriers andphyphen;njunctions prepared with GaAs and AlxGa1minus;xAs molecular beam epitaxial layers

摘要

The properties of molecular beam epitaxy (MBE) that are relevant to device applications have been investigated. Precise control of layer thickness is one of the most attractive features of MBE, and layers from a few hundred angstroms to 10 mgr; may readily be grown. Unintentionally doped GaAs layers grown on lang;100rang;hyphen;oriented substrates arentype, and roomhyphen;temperature carrier concentrations of sim;2 times; 1015cmminus;3with a mobility of sim;6000 cm2sol;V sec have been obtained. Schottky barriers on MBEnhyphen;type GaAs layers demonstrate that defecthyphen;free devices with uniform properties may be prepared at the present time. Junctions ofphyphen; andnhyphen;type MBE have also been fabricated and have been found to compare favorably withphyphen;njunctions prepared by other techniques. Heterojunctions of GaAs and AlxGa1minus;xAs have also been prepared and evaluated. Thephyphen;type AlxGa1minus;xAs layers are suitable for heterostructure applications, whilenhyphen;type AlxGa1minus;xAs layers tend to be high resistivity at the present time.