Frequency and intensity dependence of the sub-band-gap features observed in the surface photovoltage spectrum of semi-insulating GaAs

摘要

Surface photovoltage spectroscopy studies on thick semi-insulating GaAs wafers are reported in the range 850-950 nm using the chopped light geometry. We observed some interesting sharp features in the sub-band-gap of SI-GaAs, which were reported recently Appl. Phys. Lett. 79, 1715(2001); Rev. Sci. Instrum. 73, 1835 (2002). In this article, we present the dependence of these features on the chopping frequency and the source intensity. The intensity variation in the above-band-gap region and for the A peak (898 nm) in the sub-band-gap region could be fitted with single component while it is necessary to consider more than one component to fit the data for the Q peak (887 nm) in the sub-band-gap region. A model consistent with the observed features is also proposed. (C) 2002 American Institute of Physics. References: 19