High temperature operation of (lambda)(approx=)3.3 (mu)m quantum cascade lasers

摘要

We report quantum cascade lasers emitting at a wavelength near 3.3 (mu)m up to a temperature of400 K in pulsed mode. A fine tuning of the InAs/AlSb active region design allowed to maintain efficient electron injection and to reduce thermal backfilling at high temperatures. The threshold current density is 3 kA/cm~(2) at 300 K with characteristic temperature T_(0) of 175 K. The lasers emitted up to 1 W peak power in a single lateral mode at room temperature.