Blue shifting of In GaAsP-InP laser diodes using a low-energy ion-implantation technique: comparison between strained and lattice-matched quantum-well structures

摘要

Blueshifted InGaAsP-InGaAs-InP laser diodes have been fabricatedusing a technique that includes a low-energy ion implantation, used togenerate point defects near the surface of the structure, followed by athermal anneal which causes the diffusion of these defects through thequantum wells (QWs). This diffusion of point defects induces a localintermixing of atoms in the QWs and barriers, which results in adecrease in the emission wavelength of the devices. Results obtainedwith strained and lattice-matched QW structures are compared. Forlattice-matched structures, electroluminescence wavelength shifts aslarge as 76 nm were obtained. Strained QW structures presented a muchsmaller blueshift (ap;10 nm). In both cases, we observed no significantchange of the threshold current caused by the intermixing process