Electronhyphen;paramagnetichyphen;resonance (EPR) measurements were performed in the temperature rangeT=1.3ndash;100 K in samples of the semimagnetic Pb1minus;xminus;ySnyMnxTe semiconductor with carrier concentrationsp=1.6times;1019minus;1.4times;1021cmminus;3. Magnetization and Hall effect were also measured. Compositions in the range 0.12y0.72 andx=0.02, 0.04, and 0.06 were studied. We found a strong influence of the carrier concentration on the temperature dependence of the width of EPR line (Dgr;H). A very rapid increase of Dgr;Hwith increasing temperature is observed in the samples with high carrier concentrations:p=5.5, 6.8, and 14times;1020cmminus;3. The magnitude of this effect is strongly reduced in the sample with the carrier concentrationp=2.85times;1020cmminus;3. Innhyphen; andphyphen;type samples with the lowest carrier concentrations (pbartil;2times;1019cmminus;3), no temperature dependence of Dgr;His observed at high temperature. The strong effect of the carrier concentration on Dgr;Hcan be understood, in agreement with magnetic measurements, as a result of the twohyphen;carrier (light forppc=3times;1020cmminus;3and very heavy, available only forpgsim;pc) Korringa relaxation mechanism.
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