Highly controllable pseudoline electronhyphen;beam recrystallization of silicon on insulator

摘要

A new electronhyphen;beam annealing technique, an amplitude modulated pseudoline electron beam, has been proposed for recrystallization of largehyphen;area silicon layers on insulating materials (SOI). The technique utilizes an amplitude modulated sinusoidal wave for highhyphen;frequency beam oscillation. Through computer simulation of the temperature distribution for the sample surface, precise control of the position probability density profile of the line beam proved to be essential in realizing wide and uniform annealing. An optimum oscillation waveform was determined from the simulation. A largehyphen;area SOI, 4 mmthinsp;laplac;, was successfully recrystallized.